MT3S113TU transistor equivalent, silicon-germanium npn epitaxial planar type transistor.
* Low Noise Figure:NF = 1.15dB (typ.) (@ f=1GHz)
* High Gain:|S21e|2 = 12.5dB (typ.) (@ f=1GHz)
2.1±0.1 1.7±0.1
Unit: mm
0.3-+00..015
1
2
3
2.0±0.1 0.65±0..
FEATURES
* Low Noise Figure:NF = 1.15dB (typ.) (@ f=1GHz)
* High Gain:|S21e|2 = 12.5dB (typ.) (@ f=1GHz)
2.1±0..
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